Our most unique technology is X-ray Beam Induced Current (XBIC).
We use a focused X-ray beam to locally generate electron-hole pairs inside a semiconductor device.
Ordinarily, these quickly re-combine. Only in the active charge-collection or depletion region
of a diode, transistor or solar cell, an internal electric field is present that separates these pairs
and allows conduction to the electric device contacts.
The resulting induced current is measured synchronously as the beam scans across the sample.
The current map directly reflects the local charge collection efficiency from the perspective
of the real device contacts. Any imperfections between junction and contact — be it due to
material faults, contact quality, or packaging effects — show up in the measurement. This reveals where
the device works well, where it is degraded, and precisely where defects reduce performance.
Because X-rays are highly penetrating, the measurement is
fully non-destructive and works through packaging,
encapsulants, and even under real operating conditions.